H_2气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响  

Effects of hydrogen flux on aluminum doped zinc thin films by pulsed magnetron sputtering

作　　者：李林娜[1] 陈新亮[1] 王斐[1] 孙建[1] 张德坤[1] 耿新华[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,南开大学光电子薄膜器件与技术天津市重点实验室,南开大学光电信息技术科学教育部重点实验室,天津300071

出　　处：《物理学报》2011年第6期633-639,共7页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB202602,2006CB202603);国家高技术研究发展计划(批准号:2009AA050602);天津市应用基础及前沿技术研究计划(批准号:09JCYBJC06900);中央高校基本科研业务费专项资金资助的课题~~

摘　　要：实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO:Al2O3陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10-4Ω·cm,加入氢气后薄膜的电阻率降低至4.435×10-4Ω·cm.在Raman测试结果中,可以观察到表征氧空位缺陷的Raman峰(579-1cm)强度随氢气流量的增大而减小.与AZO薄膜相比,在氢气氛中溅射制备的AZO/H薄膜,腐蚀后更容易获得具有陷光效应的"弹坑"状表面形貌.Aluminum doped zinc oxide（AZO） thin films are prepared by pulsed magnetron sputtering in pure argon gas.In order to improve the properties of AZO thin films,we add hydrogen gas into vacuum during sputtering.High purity ceramic ZnO：Al2O3 target and hydrogen gas at various flow rates are used as source materials.The microstructure,the surface information,the optical and electrical properties of AZO/H film are investigated.The crystallization,the Hall mobility and the transmission between 400 nm and 1100 nm are enhanced by increasing H2 flow rate,and resistivity is decreased,the lowest resistivities of these films are all 4.435×10^-4 Ω·cm,and AZO thin films with 5.664×10^-4 Ω·cm are achieved.In this experiment,it is observed that Raman peak is related to defects due to O-vacancies（579 cm-1） in the AZO/H thin films grown at different H2 flow rates.With the increase of hydrogen flow rate,the intensity of Raman peak at 579 cm-1 decreases.Finally,AZO and AZO/H thin films are etched in 0.5% dilute hydrochloric acid.Compared with AZO thin films,AZO/H thin films can be relatively easy to achieve the light trapping structure with crater-type morphology.

关 键 词：氧化锌 氢气流量 磁控溅射 太阳电池 

分 类 号：O484.4[理学—固体物理]