退火对硼掺杂微晶硅薄膜性能的影响  

Effect of annealing on the properties of boron doped μc-Si:H by RF-PECVD

作　　者：王果[1] 卢景霄[1] 李新利[1] 高海波[1] 焦岳超[1] 李瑞[1,2] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,河南郑州450052 [2]河南工业大学,河南郑州450051

出　　处：《功能材料》2011年第6期1001-1003,共3页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(2006CB202601)

摘　　要：采用射频等离子体增强化学气相沉积(RF-PECVD)法制备了不同硼烷掺杂比例的微晶硅薄膜。随后在不同温度、不同气氛下,对沉积得到的p型微晶硅薄膜进行了退火处理。研究发现,对初始晶化率较高的薄膜,退火后其晶化率发生下降;初始晶化率较低的薄膜,退火后其晶化率则有所提高;并且,在高真空中退火更有利于薄膜的晶化。退火后,薄膜表面粗糙度的变化情况受其初始晶化率的影响;薄膜的暗电导率有大幅度的增加。其中,掺杂浓度较高的薄膜,在真空退火后其晶化率、表面粗糙度和电导都有显著的提高。Boron-doped microcrystalline silicon thin films with varying boron doping ratio were prepared using the radio-frequency plasma-enhanced chemical vapor deposition（RF-PECVD） method.Then the samples obtained were annealled at different temperature and ambient.It shows that high-crystallity films undergo a decrystallization process,while low-crystallity films go though a recrystallization process.We also find that it is in favor of crystallization under high vacuum annealling circumstance.After annealing,the initial crystalline fractions of the films have an effect on the changing of the surface roughness,and the dark conductivity of the films all has a significant improvement.For high doped films,crystalline fraction,surface roughness and dark conductivity all can be improved.

关 键 词：p型微晶硅 退火 PECVD 晶化率 表面粗糙度 

分 类 号：O484[理学—固体物理] TN304[理学—物理]