磁控过程的计算机模拟  

Computer simulation of magnetron sputtering process

作　　者：沈向前[1] 谢泉[1] 肖清泉[1] 余志强[1] 

机构地区：[1]贵州大学理学院,贵州贵阳550025

出　　处：《真空》2011年第3期49-54,共6页Vacuum

基　　金：国家自然科学基金(60566001;60766002);科技部国际合作重点项目(2008DFA52210);贵州省信息产业厅项目(0831)资助项目

摘　　要：本文基于蒙特卡罗方法,并结合SRIM软件,编制程序跟踪模拟了磁控溅射各物理过程的粒子状态。以铝靶材为例,得到了粒子在磁控溅射各物理过程的状态分布,讨论了工作参数对薄膜沉积过程的影响。模拟结果表明:溅射原子的能量主要分布在20 eV以下,当原子沉积到基片表面时,其能量主要分布在15 eV以下,但有两个分布峰值,两个分布峰值对应着快慢两种不同形式的沉积过程。原子沉积到基片表面的位置大致服从正态分布,气压p和靶基距离d影响正态分布的方差,也即影响沉积原子在基片表面分布的均匀性。功率与沉积速度呈良好的线性关系,在工作气压为1 Pa,靶基距离为60 mm的条件下,当入射粒子的能量为250 eV时,模拟得到的功率效率最大。Based on the Monte Carlo method and SRIM software,write a program to track and simulate particle states at each physical process of magnetron sputtering.Taking the aluminium material for target,the influence of working parameters on the deposition process was also discussed.Simulation results showed that： sputtering atomic energy is mainly distributed below 20eV.When the atoms arrive at the substrate surface,its energy is mainly distributed below 15eV while has two peaks which correspond to fast and slow deposition process respectively.The deposition of atoms on the substrate surface roughly obeys the normal distribution,the variance of which,representing the distribution uniformity of atoms on the substrate surface,is influenced by pressure p and target-substrate distance d.Power has a good linear relationship with the deposition velocity.The simulated power efficiency is largest when the working pressure,target-substrate distance and incident energy is 1Pa,60mm and 250eV respectively.

关 键 词：磁控溅射 蒙特卡罗方法 计算机模拟 

分 类 号：TN304.055[电子电信—物理电子学] TB43[一般工业技术]