Si(100)衬底上激光分子束外延制备高质量TiN薄膜  

Deposition of high-quality TiN films on Si(100) substrates by laser molecular beam epitaxy

作　　者：杨为家[1] 谢尚昇[1] 李雪飞[1] 王云云[1] 符跃春[1] 

机构地区：[1]广西大学材料科学与工程学院有色金属及材料加工新技术教育部重点实验室,广西南宁530004

出　　处：《真空》2011年第3期55-57,共3页Vacuum

基　　金：有色金属及材料加工新技术教育部重点实验室开放基金(GXKFJ09-24;GXKFZ-05);广西壮族自治区研究生创新计划项目(105931003002)

摘　　要：采用激光分子束外延(LMBE)技术在Si(100)上制备了高质量的TiN薄膜。对N2分压和激光脉冲能量对TiN薄膜晶体结构、生长模式和表面形貌影响的研究表明,TiN单晶薄膜呈(200)择优取向,在N2分压为10-1 Pa时,薄膜的结晶度高且表面平整致密。随着N2分压的增加,TiN(200)衍射峰向低角度移动。激光脉冲能量显著影响TiN薄膜的生长模式,在能量为200 mJ/p时,薄膜呈二维层状生长模式且具有纳米级平滑表面,为制备高取向度AlN薄膜提供了很好的条件。High-quality TiN thin films were deposited on Si（100） substrates by laser molecular beam epitaxy（LMBE） technique.Effects of N2 partial pressure and laser pulse energy on the crystal structure,growth mode and surface morphology of TiN films were investigated and the results showed that single crystal TiN film grows in（200） preferred orientation and has high crystallinity,smooth and dense surface when the N2 partial pressure is 10-1Pa.With the increasing of N2 partial pressure,the（200） diffraction peak of TiN film progressively shifted towards lower diffraction angle.Laser pulse energy had considerable effects on the growth mode of TiN films,and the film showed the layer-by-layer growth mode and nanoscale smooth surface at 200mJ/p.These could provide excellent foundations for the preparation of highly-orientated AlN films.

关 键 词：TIN薄膜 N2分压 激光脉冲能量 晶体结构 生长模式 

分 类 号：O484[理学—固体物理]