ECR Plasma CVD淀积介质膜的工艺模拟  

Simulation Based Prediction of Refractive Index of Dielectric Thin Film Deposition by ECR Plasma CVD

作　　者：谭满清[1] 陆建祖[1] 李玉鉴[1] 

机构地区：[1]中国科学院半导体研究所工程中心,北京100083

出　　处：《光学仪器》1999年第4期51-55,共5页Optical Instruments

摘　　要：以实验数据为基础，运用人工神经网络方法，建立了电子回旋共振等离子体化学气相沉积（ＥＣＲ Ｐｌａｓｍ ａ ＣＶＤ）淀积硅的氮、氧化物介质膜折射率ｎ 与气流配比Ｑ（Ｎ２）／Ｑ（ＳｉＨ４）和Ｑ（Ｏ２）／Ｑ（ＳｉＨ４）关系的数学模型，此模型在给定气流配比Ｑ（Ｎ２ ）／Ｑ（ＳｉＨ４）和Ｑ（Ｏ２）／Ｑ（ＳｉＨ４）时所预测的成膜折射率跟实验值符合得很好，该数学模型为ＥＣＲ Ｐｌａｓｍ ａ ＣＶＤ淀积全介质光学膜的工艺模拟打下坚实的基础。Based on experiment result, a mathematical model has been established in this paper for the relation between refractive index n of silicon oxide or nitride and gas ratio Q(N 2)/Q(SiH 4),Q(O 2)/Q(SiH 4) by artificial neural network. A good prediction is made for the refractive index n by the model when gas ratioQ(N 2)/Q(SiH 4),Q(O 2)/Q(SiH 4) are given. And the model is basic of simulation for all dielectric optical coatings deposition by ECR plasma CVD.

关 键 词：ECR PLASMA CVD 光学膜 工艺模拟 CVD 

分 类 号：O484.1[理学—固体物理]