抛光盘、抛光头转速比对化学机械抛光效果的影响分析  

The Effect Analyzes of the Plate and the Head Rotation Speed Ratio in The Chemical Mechanical Polishing process

作　　者：高慧莹[1] 费玖海[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京101601

出　　处：《电子工业专用设备》2011年第5期9-14,共6页Equipment for Electronic Products Manufacturing

基　　金：国家863项目(2009AA043101)

摘　　要：针对化学机械抛光(CMP)过程中,抛光盘、抛光头转速比不同,其晶片的抛光效果不同的现象,从运动学角度详细分析了CMP过程中晶片上任一点的去除速度和运动轨迹,并通过Matlab进行仿真,找出转速比与去除速度和运动轨迹的函数关系。In the Chemical Mechanical Polishing（CMP） process,the rotation speed ratio of the polishing plate and the polishing head is different,the wafer＇s surface planarization state is also different.This article analyzes the moving speed and the moving track of the random dot on the wafer surface by the kinematics theory.Using the Matlab simulation method finds the relations between the rotation speed ratio and the moving speed,the moving track.

关 键 词：化学机械抛光 转速比 去除速度 运动轨迹 

分 类 号：TN305.2[电子电信—物理电子学]