金刚石线锯切割晶体硅模式研究  

On the Mode of Diamond Wire Saw Cutting of Crystalline Silicon

作　　者：蔡二辉[1] 汤斌兵[1] 周浪[1] 

机构地区：[1]南昌大学太阳能光伏学院,江西南昌330031

出　　处：《南昌大学学报（工科版）》2011年第2期194-199,共6页Journal of Nanchang University(Engineering & Technology)

摘　　要：通过单颗金刚石刻划晶体硅实验和金刚石线锯切割晶体硅片表面形貌观察,分析研究了金刚石线锯切割晶体硅的模式。结果表明:在较大正压力下刻划时,金刚石主要以脆性模式切割晶体硅,划痕呈破碎崩坑状,在单颗金刚石刻划实验条件下可看到脆性解理条纹;而在较小的压力下,金刚石主要以塑性模式切割晶体硅,划痕相对平直光滑;金刚石线锯切割晶体硅片时,硅片表面呈现大量由脆性断裂留下的不规则凹坑和较长的光滑划痕,显示出以脆性模式与塑性模式混合切割模式。分析其原因可能是由于切割过程中线锯正下方对晶体硅的压力较大,以脆性模式进行多颗粒反复刻划;而与此同时,线锯侧面金刚石颗粒以小得多侧向压力对切割暴露出的硅表面进行蹭磨刻划,因此产生塑性模式刻划。The diamond wire saw was a promising cutting technology for silicon solar wafer production.Experiments of single diamond scoring of crystalline silicon and diamond wire saw slicing of crystalline silicon have been carried out.The micro-morphologies of the cut surfaces were examined.The results showed that,under higher pressure,crystalline silicon was cut by diamond wire saw in brittle model,with broken pits on cut surfaces,and brittle cleavage stripes in the case of single diamond scoring test;under lower pressure,crystalline silicon was cut by diamond in plastic model,with relatively flat and smooth scratches.On silicon wafers sliced by diamond wire saw,there were lots of irregular pits,along with extended smooth scratches on top of them,indicating the mixture of the brittle cutting mode and the plastic cutting mode.The reason may be that the pressure underneath the cutting wire was high,where the crystalline silicon was cut in brittle mode,while the exposed surface would inevitably be scratched by the diamonds on lateral sides of the wire saw,under a much lower pressure,which would cut the surface in plastic mode.Therefore,a cut surface characterized by a mixture of brittle and plastic cutting mode was generated by diamond wire saw slicing.

关 键 词：硅 切割 金刚石线锯 

分 类 号：TN305.1[电子电信—物理电子学]