Al_xGa_(0.51-x)In_(0.49)P中Al的组分研究  

Study on the Al Composition in Al_xGa _(0.51-x)In_(0.49) P

作　　者：张淑芝[1] 连洁[1] 魏爱俭[1] 黄伯标[2] 崔德良[2] 秦晓燕[2] 王海涛[3] 

机构地区：[1]山东大学光电系,济南250100 [2]山东大学晶体材料所,济南250100 [3]山东大学环境工程系,济南250100

出　　处：《光电子．激光》1999年第5期415-418,共4页Journal of Optoelectronics·Laser

基　　金："八六三"计划资助

摘　　要：本文利用椭圆偏振光谱法测量了用ＭＯＣＶＤ方法在ＧａＡｓ衬底上生长的ＡｌＧａＩｎＰ及ＡｌＧａＩｎＰ掺Ｓｉ两个样品，在可见光区室温下的光学常数，求得吸收系数、介电函数随光子能量的变化关系。用有效介质近似理论（ＥＭＡ）和线性内插法计算了样品中Ａｌ的组分，并与Ｘ射线微区分析法（能谱法）的测量结果加以比较。Optical constants of Al xGa 0.51-x In 0.49 P and that doped by Si prepared by MOCVD on the GaAs substrates were measured by using the ellipsometric spectroscopy in the visible light region at room temperature.Dependence of the absorption coefficients and dielectric functions for two samples on the photon energy were obtained.The Al composition was calculated by using EMA and linear interpolation,and the results was compared with that obtained by the energy spectrum method.Three results were consistent with each other.

关 键 词：椭偏光谱 有效介质近似 四元半导体 

分 类 号：TN304.2[电子电信—物理电子学]