MOSFET栅电流分布的理论建模  

Theoretical Modeling of Gate Current Distribution in MOSFET

作　　者：汤玉生[1] 郝跃[2] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030 [2]西安电子科技大学微电子学所,西安710071

出　　处：《电子学报》1999年第10期124-127,共4页Acta Electronica Sinica

摘　　要：小尺寸ＭＯＳＦＥＴ的强场性、场畸变性和漏区尺度比例的增大，使它的分布效应增强．更准确地描述小尺寸器件的栅电流需要分布模型．本文依据“幸运电子”概念，基于我们已创建的沟道和衬底电流的二维分布模型，建立了ＮＭＯＳＦＥＴ 的电子和空穴栅电流的分布模型．空穴栅电流的分布模型是基于负纵向场加速的新的发射物理过程建立的．所建分布模型包含了更祥尽的热载流子向栅发射的物理过程，这将有利于ＭＯＳＦＥＴ热载流子的损伤分布。In very small MOSFET,distribution effects are strong due to high strength and large change of its electric field as well as its larger drain section.Therefore,distribution models are required to describe much accurately the gate currents.In this paper,the distribution models of electron and hole gate currents in NMOSFET are built by using of “lucky electron” concept and the two dimensional distribution models models of drain and substrate currents proposed by us.the distribution model of hole gate current is based on new process of hot hole injection in which holes are accelerated by the minus vertical electric field.The proposed distribution models can describe clearly injection processes of hot carriers,which is useful for the modeling of damage distrbution,damage growth and damage saturation of MOSFET's hot carrier degradation.

关 键 词：电子栅电流 空穴栅电流 分布模型 MOSFET 

分 类 号：TN386.1[电子电信—物理电子学]