TEOS LPCVD技术在SiC功率器件工艺中的应用  

Application of TEOS LPCVD Technique in SiC Power Devices Process

作　　者：胡玲[1] 杨霏[1] 商庆杰[1] 潘宏菽[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2011年第6期439-442,共4页Semiconductor Technology

摘　　要：应用正硅酸乙酯(TEOS)LPCVD技术实现二氧化硅在SiC晶片表面的淀积,在一定程度上弥补了SiC氧化层过薄和PECVD二氧化硅层过于疏松的弊端。采用TEOS LPCVD技术与高温氧化技术的合理运用,既保证了氧化层介质的致密性和与SiC晶片的粘附能力,又提高了器件的电性能和成品率,同时避免了为获得一定厚度氧化层长时间高温氧化的不足。采用此技术后,SiC芯片的直流成品率得到提高,微波功率器件的对比流片结果显示微波性能也得到了明显的提升,功率增益比原工艺提高了1.5 dB左右,功率附加效率提升了近10%。SiO2 on the SiC wafer surface by TEOS LPCVD can avoid the problems of extremely thin thickness of the oxide layer by simply high temperature oxidation and the loosen of the SiO2 layer by PECVD.The reasonable application of TEOS LPCVD together with high temperature oxidation improved the layer＇s tightness and the adherence to the SiC surface,while avoiding the long time needed for certain thickness by high temperature oxidation.After the application of TEOS LPCVD,compared with the referenced wafer,the electric performance and yield of the power devices were improved.The power gain increases about 1.5 dB and power added efficiency（PAE） increases about 10%.

关 键 词：低压化学气相淀积 正硅酸乙酯 碳化硅 微波功率器件 二氧化硅 

分 类 号：TN385[电子电信—物理电子学] TN386