激光诱导扩散区的温度监控  

MEASURING AND CONTROLLING OF THE TEMPERATURES OF THE REGION IN LASER ASSISTED DIFFUSION

作　　者：李忠东[1] 郭旗[2] 林为干[2] 

机构地区：[1]华南师范大学量子电子学研究所,广州510631 [2]电子科技大学应用物理研究所,成都610054

出　　处：《应用光学》1999年第5期24-27,共4页Journal of Applied Optics

基　　金：国家自然科学基金;教育部留学回国人员科研启动基金;广东省"千百十工程"优秀人才培养基金

摘　　要：激光诱导扩散中的曝光区大小为１０μｍ 量级，其温度分布的测量是较困难的。本文报道一种曝光中极微小面积的不接触测量及控制。文中介绍测控原理、实验装置，给出测量结果。The determination of the temperature distribution in the exposed region is something difficult since the size of the exposed region in laser assisted diffusion is only the order of 10 microns Measuring and controlling of the temperature of the extrasmall areas in that exposed region is reported.The measuring and controlling principle, the experimental set up and the experimental results are presented,extra shallow P N junctions which have high dopant concentration are achieved.

关 键 词：激光诱导扩散 激光诱导处理 温度测量 半导体 

分 类 号：TN407[电子电信—微电子学与固体电子学] TN307