中频孪生靶非平衡磁控溅射制备氮化硅薄膜及其性能(英文)  

Composition and Properties of Silicon Nitride Thin Films Deposited by Mid-frequency Dual-target Unbalanced Magnetron Sputtering

作　　者：王春[1] 牟宗信[1] 刘冰冰[1] 臧海荣[1] 牟晓东[1] 

机构地区：[1]大连理工大学三束材料改性教育部重点实验室,辽宁大连116024

出　　处：《材料科学与工程学报》2011年第3期331-336,326,共7页Journal of Materials Science and Engineering

基　　金：Project 50407015 supported by National Natural Science Foundation of China and Project Supported by Scientific Research Fund of Liaoning Provincial Education Department

摘　　要：本文采用中频孪生靶非平衡磁控溅射技术在不同氮气流量比例的条件下制备出氮化硅薄膜。利用傅里叶变换红外光谱仪(FTIR)、X射线衍射仪(XRD)、原子力显微镜(AFM)、椭偏仪等研究了氮气流量比率对氮化硅薄膜的微观结构、表面形貌、沉积速率、折射率的影响。结果表明:中频孪生非平衡磁控溅射技术制备的薄膜为非晶态氮化硅。随着氮气流量比率的增加,Si-N键红外光谱吸收带向低波数漂移,薄膜的沉积速率降低,表面结构更为光滑致密,氮化硅薄膜的折射率降低。薄膜的硬度和杨氏模量分别达到22和220GPa左右。Silicon nitride thin films have been deposited onto the silicon（001） substrate by a mid-frequency dual-target unbalanced magnetron sputtering with two pure Si targets using different gas（Ar,N2） mixtures at fixed other conditions.The microstructure,morphology,thickness and refractive index of silicon nitride thin films were investigated by Fourier transform infrared spectroscopy（FTIR）,X-ray diffractometry（XRD）,atomic force microscopy（AFM） and ellipse-polarize spectrophotometry.FTIR spectra of the films reveal that the main absorption band of the Si-N bond shifts to higher wavenumbers with decreasing nitrogen mass flow ratio.All the films are amorphous silicon nitride.The surface morphology,refractive index and deposition rate are found to depend distinctively upon the different nitrogen mass flow ratios.The hardness and Young＇s modulus of the films approach approximately 22 and 220GPa,respectively.

关 键 词：氮化硅薄膜 折射率 磁控溅射 红外光谱 

分 类 号：O484[理学—固体物理]