用喇曼光谱方法研究注钕硅单晶中损伤层的温度特性  

THE INVESTIGATION ON THE TEMPERATURE DEPENDENCE OF THE DAMAGED LAYERS IN Nd-IMPLANTED SILICON CRYSTALLINES BY RAMAN SPECTRA

作　　者：黄春晖[1] 刘洪图[1] 金怀诚 吴志强[1] 许存义 

机构地区：[1]中国科学技术大学物理系

出　　处：《光谱学与光谱分析》1989年第1期23-26,共4页Spectroscopy and Spectral Analysis

摘　　要：本文报道了用喇曼光谱方法研究了注钕硅单晶中损伤层的温度特性。用硅520cm^(-1)特征峰的相对强度,来唯象地描述注入损伤层的无序度、折射率,消光系数等数参随退火温度的变化关系。发现550—600℃是消除损伤的最佳退火温区,并与方块电阻法所得结果进行了比较。The temperature dependence of the damaged layers in Nd-implanted silicon crystallines has deen investigated by Raman spectra.Using the relative intensities of silicon characteristic peak at 520cm^(-1), the variation of parameters, such as the extent of disordeing, refractive index and extinction coefficient et al.,with annealing temperature has been phenomenologically discribed.It was found that 550℃ —600℃ is the optimun annealing temperature range for removing the ionimplantation damage. The comparison has also been carried out with the results obtained by square-resistance measurement.

关 键 词：硅单晶 喇曼光谱法 损伤层 钕 

分 类 号：O613.72[理学—无机化学]