Ka波段AlGaN/GaN HEMT的研制  

Design and implementation of Ka-band AlGaN/GaN HEMTs

作　　者：王东方[1,2] 袁婷婷[1,2] 魏珂[1] 刘新宇[1] 刘果果[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院研究生院,北京100049

出　　处：《红外与毫米波学报》2011年第3期255-259,共5页Journal of Infrared and Millimeter Waves

基　　金：自然科学基金"氮化镓基毫米波器件和材料基础与关键问题研究"(60890190)

摘　　要：为了提高AlGaN/GaN HEMT的频率,采用了缩小源漏间距、优化栅结构和外围结构等措施设计了器件结构,并基于国内的GaN外延片和工艺完成了器件制备.测试表明所研制的AlGaN/GaN HEMT可以满足Ka波段应用.其中2×75μm栅宽AlGaN/GaN HEMT在30V漏压下的截止频率为32GHz,最大振荡频率为150GHz;在30GHz连续波测试条件下,线性增益达到10.2dB.6×75μm栅宽AlGaN/GaN HEMT的截止频率为32GHz,最大振荡频率为92GHz;在30GHz连续波测试条件下,线性增益达到8.5dB.器件的击穿电压在60V以上.In order to improve frequency characteristics,AlGaN/GaN HEMTs were designed by reducing source-drain spacing,optimizing gate-structure and peripheral structure.The devices have been fabricated with domestic GaN epitaxial wafer and process.Measurements indicated that the AlGaN/GaN HEMTs can operate at Ka-band.At VDS=30V,the HEMTs with 2×75μm gate-width exhibited a current gain cutoff frequency（fT） of 32GHz and a maximum frequency of oscillation（fmax） of 150GHz;Under CW operating condition at 30GHz,the linear gain reaches 10.2dB.For the HEMTs with 6×75μm gate-width,fT is 32GHz and fmax is 92GHz;Under CW operating condition at 30GHz,the linear gain reaches 8.5dB.The breakdown voltage is over 60V.

关 键 词：氮化镓 高电子迁移率晶体管 KA波段 毫米波 

分 类 号：TN325.3[电子电信—物理电子学]