VDMOS异常峰值电流产生原因研究  

Study on Exceptional Current Wave Crest of VDMOS

作　　者：宋文斌[1] 蔡小五[1] 

机构地区：[1]大连东软信息学院,辽宁大连116023

出　　处：《微电子学》2011年第3期433-435,共3页Microelectronics

摘　　要：研究了VDMOS器件存在异常峰值电流的原因,提出了解释此现象的理论。异常峰值电流的大小由VDMOS元胞在P+body区之间neck区的界面状态决定。一般MOSFET不具有此特殊结构,因而不具有此异常峰值电流现象。为了验证上述理论,采用TCAD(ISE),模拟了氧化物陷阱电荷和界面态电荷对异常峰值电流的影响程度。研究结果表明,氧化物陷阱电荷和界面态电荷显著影响neck区域的复合电流,是产生异常峰值电流最主要的原因。Exceptional current wave crest of VDMOS was investigated,and elementary theory to explain the phenomena was proposed.This phenomena is unique to VDMOS due to the neck region between P＋ body regions of VDMOS cell,which is distinct from MOSFET.Effects of oxide trapped charge and interface state charge on the current wave crest was simulated using TCAD（ISE）.Results showed that the bigger surface recombination current in the depleted neck region was the major origin for unique current wave crest.

关 键 词：VDMOS 复合速率 异常峰值电流 氧化物陷阱电荷 界面态电荷 

分 类 号：TN323.4[电子电信—物理电子学]