用高分辨率沟道背散射谱仪研究硅的低能氮离子氮化  

STUDY ON LOW ENERGY ION BEAM NITRIDATION OF Si BY HIGH RESOLUTION CHANNELING-BACKSCATTERING

作　　者：朱德彰[1] 潘浩昌[1] 曹建清[1] 朱福英[1] 陈国明[2] 陈国樑 杨絜 邹世昌[2] 

机构地区：[1]中国科学院上海原子核研究所,上海201800 [2]中国科学院上海冶金研究所,上海200050

出　　处：《物理学报》1990年第8期1278-1281,共4页Acta Physica Sinica

摘　　要：用高分辨率沟道背散射技术研究了低能N离子注入单晶硅形成氮化硅的过程。测出了N和位移Si原子的深度分布。提出在N离子注入时同时存在着三个过程——注入、溅射和释放。由此建立了一个微分方程描写样品中剩余N的浓度变化,并讨论了氮化硅形成机制。Low energy ion beam nitridation of silicon has been investigated by high resolution channeling-backscattering technique. The profiles of nitrogen and displaced silicon atoms are obtained, During the bombardment, all the three processes of implanting, sputtering and releasing exist. A differential equation is deduced and the mechanism of formation of silicon nitride is discussed.

关 键 词：散射谱仪 硅 氮化 单晶 离子注入 

分 类 号：TN305.3[电子电信—物理电子学]