交叉电场和磁场下GaAs/AIGaAs超晶格子带结构  

SUBBAND STRUCTURE OF GaAs/AlGaAs SUPERLAT-TICES UNDER CROSSED ELECTRIC AND MAGNETIC FIELDS

作　　者：范卫军[1] 夏建白[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《物理学报》1990年第9期1465-1472,共8页Acta Physica Sinica

摘　　要：本文用有效质量理论计算了加平行磁场(方向平行于GaAs/AlGaAs界面)和垂直电场(方向垂直于界面)的超晶格子带结构和光跃迁。加平行磁场后,空穴子带的二重简并解除,轻重空穴混合。加电场后,产生Stark位移,电子和空穴能级发生一定位移。最后,讨论了磁光跃迁概率。The subband structure and optical transition of GaAs/AlGaAs superlattices are investigated in the presence of an electric field applied along the growth direction and a magnetic field parallel to the GaAs/AlGaAs interface by using the effective mass theory. In the presence of the parallel magnetic field, the twofold degeneracy is removed and heavy and light holes are mixed. The presence of the electric field introduces the Stark shift. The magnetic-optical transition probability is also discussed.

关 键 词：电场 磁场 GAAS ALGAAS 超晶格 

分 类 号：O471[理学—半导体物理]