Co掺杂SiC稀磁半导体薄膜的磁与电阻率特性  

Magnetic and resistant properties of co-doped SiC DMS film

作　　者：李响[1] 安玉凯[1] 肖庆[1] 段岭申[1] 吴忠华[2] 刘技文[1] 

机构地区：[1]天津理工大学材料科学与工程学院,教育部光电材料与显示器件重点实验室,天津市光电显示材料与器件重点实验室,天津300384 [2]中国科学院高能物理研究所,北京同步辐射室,北京100049

出　　处：《光电子．激光》2011年第7期1038-1041,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(10904110,60476003);天津市自然科学基金资助项目(10JCYBJC01600);天津市高等学校科技发展基金资助项目(20060902)

摘　　要：采用射频磁控溅射法制备了不同Co掺杂浓度的SiC薄膜。X射线衍射(XRD)、X射线光电子能谱(XPS)、Hall以及电阻率-温度(-ρT)曲线测试结果表明,Co掺杂SiC薄膜具有4H-SiC(100)晶体结构和典型的半导体导电特征,未发现Co金属团簇以及其它CoSi第二相化合物生成,显示了Co原子以替位掺杂的形式进入了SiC晶格;电流-电压(I-V)特性测试发现,Co掺杂SiC薄膜是一种非均匀掺杂;PPMS磁性测量表明,Co掺杂SiC薄膜具有明显的室温铁磁性,饱和磁化强度随着Co掺杂浓度的增加而增加,其铁磁性的来源符合缺陷机制的束缚磁极子(BMP)机制。Co doped SiC films were prepared by the RF-magnetron sputtering.The XRD、XPS、Hall and ρ-T curve measurements show that the Co doped SiC films have a 4H-SiC（100）crystal orientation and typically features of semiconductor conduction properties.We did not discover metal Co clusters and other CoSi second phase compound in the films which revealing that Co is substituted enter the SiC lattice.The Volt-Ampere characteristic testing on the films,shows that the films is a kind of nonhomogeneous doping.The magnetic properties measurement by PPMS shows the Co-doped SiC films have room temperature ferromagnetic,the saturation magnetization increase with the increasing Co content.The ferromagnetism is correspondent with the Bound Magnetic Polarons（BMP） mechanism.

关 键 词：SIC 稀磁半导体(DMS) CO掺杂 铁磁性 

分 类 号：O649[理学—物理化学]