入射能量对H2^＋与SiC表面相互作用影响的分子动力学模拟  

Molecular Dynamics Simulation of incident energy effects of H_2^+ interactions with SiC surface

作　　者：孙伟中[1] 赵成利[2] 刘华敏[1] 张浚源[1] 吕晓丹[2] 潘宇东[3] 苟富均[1,4] 

机构地区：[1]四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室,成都610064 [2]贵州大学等离子体与材料表面作用研究所,聚变材料课题组,贵州550025 [3]核工业西南物理研究院,成都610041 [4]荷兰皇家科学院等离子体所,荷兰2300

出　　处：《核聚变与等离子体物理》2011年第1期85-90,共6页Nuclear Fusion and Plasma Physics

基　　金：国际热核聚变实验堆(ITER)计划专项资助课题(2009GB104006);贵州省优秀青年科技人才培养计划资助课题(700968101)

摘　　要：用分子动力学方法研究了入射能量对H2+与SiC样品表面相互作用的影响。模拟结果表明,在H2+轰击SiC样品表面的初始阶段,样品中H原子的滞留量增加较快,其后,增加的速率减慢,并逐渐趋于饱和。入射能量越大,样品中H原子的滞留量也就越大。样品在H2+的轰击下,样品Si、C原子会发生刻蚀。入射能量越大,Si和C原子的刻蚀量越大。在相同入射能量下,Si原子的刻蚀量大于C原子。生成的产物中,以H,H2和SiH4为主;产物H2的量随着能量的增加而减小。其他产物随着入射能量的增加而增加。Molecular dynamic simulations were performed to study H2＋ ions bombarding SiC with incident energies of 1, 5, 10 and 15eM The simulated results show that the retention of H atoms on the surface increases with increasing energy. During the initial stage, the amount of retention H atoms sharply increases and then the retention of H atoms reaches saturation. Si and C atoms are removed from the surface with energies of 10 and 15eV. The number of removed Si atoms is larger than that of C atoms. For the products, H, H2 and SiH4 are dominant. And with increasing incident energies, the number of Ha species decreases and the other species increase.

关 键 词：分子动力学 入射能量 滞留H原子 刻蚀 

分 类 号：TL627[核科学技术—核技术及应用]