后段工艺干法去除光刻胶研究  

Study on Photoresist Ashing Process in BEOL with Dry Etch Method

作　　者：赖海长[1] 郭兴龙[1] 

机构地区：[1]上海交通大学微电子学院,上海200240

出　　处：《电子与封装》2011年第6期23-26,共4页Electronics & Packaging

摘　　要：干法去胶是用等离子体将光刻胶剥除,相对于湿法去胶,干法去胶的效果更好、速度更快。在现代集成电路制造中,干法去胶工艺加氟可有效地提高去除光刻胶的能力,特别是在离子注入之后的去胶工艺,含氟气体产生的氟离子可以防止光刻胶硬化。但在后段干法去胶工艺中,由于含氟气体的引入,会产生一系列的问题。因此,文中提出了对去胶气体组合配比进行改良,大量氧气加少量氮气的气体组合可以得到稳定的灰化率,且能减少机器零部件损耗并解决缺陷问题。提高晶圆反应温度可以大幅度提高灰化率,从而提高去胶设备的产能,降低工艺成本。Dry ashing process is use plasma to remove the photoresist,compare to wet ashing,dry ashing process is more effective and quick.In modern VLSI fabrication,fluorine gas are usually added into photoresist ashing process to remove the residue of crust formed after the implantation with higher energy.However,in BEOL ashing process,because of the introduction of fluorinated gases,will produce a series of problems.We propose to optimize the ashing gas composition and ratio,mass O2 with little N2 gas mix can be a stable rate of ash,and can reduce machine parts damage and to solve defects issue.Increase the wafer temperature can greatly improve the ashing rate,thereby enhancing the capacity to dispensing equipment,reduce technology costs.

关 键 词：光刻胶 去胶 灰化 灰化率 

分 类 号：TN305.7[电子电信—物理电子学]