肖特基二极管伏安特性与导通压降相关性研究  

The Associativity between Current voltage Characteristics and Conductance Voltage drop of the Schottky Diode

作　　者：董小兵[1] 张少云[1] 马小芹[1] 徐传骧[1] 王西英 

机构地区：[1]西安交通大学,西安710049 [2]卫光爱尔电子有限公司,西安710061

出　　处：《电力电子技术》1999年第6期54-57,共4页Power Electronics

摘　　要：根据金属与半导体之间肖特基势垒接触的电流电压关系设计出了一套简易的实验装置，研究了４０ＣＰＱ０４５ 型肖特基势垒二极管芯片小电流下（＜ ２Ａ）的正向电流电压特性。通过外推４０Ａ大电流下芯片结压降的数值，验证了通过小电流正向电流电压特性曲线来外推预测大电流下芯片结压降值的可行性。Based on the current voltage interralation of the Schottky barrier contact between metal and semiconductor,we provide a circuit to study the forward current voltage characteristics of the 40CPQ045 barrier schottky diode under low current(<2A).It has been proved that the value of the voltage drop can be achieved through the extrapolation of the forward current voltage curve when the current through the Schottky barrier diode reach 40A.

关 键 词：肖特基二极管 伏安特性 导通压降 

分 类 号：TN311.7[电子电信—物理电子学]