衬底温度对a-Si_(1-x)C_x:H薄膜成分的影响  

The Impact of the Substrate Temperature on the Compositions of a-Si_(1-x)C_x:H

作　　者：田帅[1] 简红彬 

机构地区：[1]天津电子信息职业技术学院,天津300350 [2]天津三美电机有限公司,天津300163

出　　处：《鲁东大学学报（自然科学版）》2011年第3期229-231,共3页Journal of Ludong University:Natural Science Edition

摘　　要：采用热壁低压化学气相沉积(LPCVD)技术,在Si(100)衬底上成功制备出了具有化学计量的氢化非晶碳化硅(a-Si1-xCx∶H)薄膜,并用傅里叶变换红外光谱仪和X射线光电子能谱仪对薄膜成分进行了分析,探讨了衬底温度对a-Si1-xCx∶H薄膜成分的影响,结果发现随着衬底温度升高,CH4分解效率得到提高,过量的C形成了C-C键.Hydrogenated amorphous silicon carbide films（a-Si1-xCx∶H） have been successfully deposited on Si（100） surface with CH4 and SiH4 as reaction gases by the method of low pressure chemical vapor deposition（LPCVD）.Fourier transform infrared spectroscopy（FTIR） and X-ray photoelectron spectroscopy（XPS） are employed to analyze the impact of the substrate temperature on the compositions of as-deposited films.The results showed that the decomposition efficiency of CH4 was enhanced with a rise of the substrate temperature and the C—C bond was formed by the excessive carbide.

关 键 词：热壁LPCVD a-Si1-xCx∶H薄膜 衬底温度 薄膜成分 

分 类 号：O484[理学—固体物理]