亚100nm应变Si／SiGe nMOSFET阈值电压二维解析模型  

Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET

作　　者：王冠宇[1] 张鹤鸣[1] 王晓艳[1] 吴铁峰[1] 王斌[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2011年第7期573-581,共9页Acta Physica Sinica

基　　金：国家部委资助项目(批准号:51308040203,6139801);中央高校基本科研业务费(批准号:72105499,72104089);陕西省自然科学基础研究计划(批准号:2010JQ8008)资助的课题~~

摘　　要：本文基于二维泊松方程,建立了适用于亚100nm应变Si/SiGe nMOSFET的阈值电压理论模型.为了保证该模型的准确性,同时考虑了器件尺寸减小所导致的物理效应,如短沟道效应,量子化效应等.通过将模型的计算结果与二维器件模拟器ISE的仿真结果进行对比分析,证明了本文提出的模型的正确性.最后,还讨论了亚100nm器件中常规工艺对阈值电压的影响.该模型为亚100nm小尺寸应变Si器件的分析设计提供了一定的参考.In this paper, based on the two-dimensional （2D） Possion＇ s equation, an analytical model of threshold voltage, which is applied to a sub-100nm strained-Si/SiGe nMOSFET, is pro- posed. The secondary effects induced by reducing size such as short-channel effects, quantum mechanical effects are also taken into consideration in order to ensure the accuracy of the model. Then the evidence for the validity of our model is derived from the comparison between analytical results and the simulation data from the 2D device simulator ISE. Finally, the influence of conventional arts in sub-100 nm device fabrication on threshold voltage is also discussed. The proposed model can also be easily used for reasonable analysis and design of sub-100nm strained-Si/SiGe nMOSFET.

关 键 词：亚lOOnm 应变Si/SiGe NMOSFET 二维表面势 阈值电压 

分 类 号：TN386[电子电信—物理电子学]