Si基底磁控溅射制备CrN薄膜的表面形貌与生长机制  

Surface morphology and growth mechanism of magnetron sputtered CrN films on silicon substrate

作　　者：谈淑咏[1,2] 张旭海[1,2] 吴湘君[1,2] 蒋建清[1,2] 

机构地区：[1]东南大学材料科学与工程学院,南京211189 [2]东南大学江苏省先进金属材料高技术研究重点实验室,南京211189

出　　处：《中国有色金属学报》2011年第6期1367-1372,共6页The Chinese Journal of Nonferrous Metals

基　　金：国家科技支撑计划资助项目(2007BAE15B05)

摘　　要：在Si基底上采用直流磁控溅射法制备CrN薄膜,利用原子力显微镜(AFM)、扫描电镜(SEM)和X射线衍射仪(XRD)分析薄膜表面形貌和物相成分,探讨薄膜生长的动力学过程。结果表明:只有当生长时间足够(1 800 s)时,才能形成具有CrN相的薄膜。随着CrN薄膜的生长,薄膜表面晶粒由三棱锥发展为三棱锥与胞状共存状,薄膜表面粗糙度逐渐增大,动力学生长指数β=0.50。The CrN films were deposited on silicon substrate by direct current（DC） magnetron sputtering.The atomic force microscope（AFM）,scanning electron microscope（SEM） and X-ray diffractometer（XRD） were used to analyze film surface morphology and phase structure.The dynamics of film growth processes was investigated.The results show that CrN films are formed only when the deposition time is enough（1 800 s）.With the growth of films the surface grains change from pyramidal structure to the coexistence of pyramidal and cellular structure,and the film surface roughness increases gradually.The growth exponent is β=0.50.

关 键 词：直流磁控溅射 表面形貌 粗糙度 生长指数 

分 类 号：TB3[一般工业技术—材料科学与工程] TG14[金属学及工艺—金属材料]