Ga_(1-x)Al_xAs半导体的T0声子形变势引起共振喇曼散射  

Resonant Raman Scattering by TO Pnonon Deformation Potential in Ga_(1-x_Al_xAs

作　　者：连世阳[1] 杨锦赐 

机构地区：[1]厦门大学物理学系

出　　处：《厦门大学学报（自然科学版）》1990年第5期515-519,共5页Journal of Xiamen University：Natural Science

基　　金：福建省自然科学基金

摘　　要：研究了Ga_(1-x)、Al_xAs 半导体的TO_1和TO_2声子的共振喇曼散射。利用半导体带隙随温度变化,使它与固定激光线调谐,曲此完成共振散射实验。按准静态近似计算共振散射曲线,并从微观散射机制讨论共振曲线最大值偏移,较好地解释实验结果。从实验中求出x=0.71和x=0.61 两种样品的直接带隙E_0 分别为2.44 eV和2.31 eV。The resonant Raman scattering by TO1 and TO2 in Gaξ-xAIxAs are studied. In order to be tuned the energy gap of a semiconductor with respect to a fixed gas laser line, the resonant Raman scattering were performed by means of the variation of the energy gap with the temperature in the sample. According to the quasistatic approximation, the resonant profiles of one-phonon deformation potential scattering were calculated. It was discussed in the microscopic theory that the resonance maxima occured at an energy 1 /2hvf higher than the gap energies. These wcre applied to interpred the experimental data. From these measurements, it is found that the direct energy gap E0 is 2.44 eV for Ga0.29A10.71As and 2.31 cV for Ga0.39Al0.81As at room temperature.

关 键 词：半导体 TO声子形变势 GAALAS 

分 类 号：TN304.22[电子电信—物理电子学]