直流/射频反应磁控溅射法制备W掺杂VO_X薄膜的工艺和性能  

Process and performance of W-doped VO_X thin film prepared by DC/RF magnetron co-sputtering

作　　者：聂竹华[1] 李合琴[1] 都智[1] 储汉奇[1] 宋泽润[2] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国电子科技集团公司第43研究所,安徽合肥230022

出　　处：《真空》2011年第4期65-68,共4页Vacuum

基　　金：国家"973"项目(2008CB717802);安徽省自然科学基金(090414182);安徽省高校自然科学基金(KJ2009A091)

摘　　要：用直流/射频反应磁控共溅射法分别在玻璃和单晶硅片基底上制备VOX薄膜和W掺杂VOX薄膜,经退火后,对薄膜进行电阻-温度特性、XRD、表面形貌等测试。结果表明:当溅射气压为1.5 Pa、氧氩比为0.8:25 sccm、V靶采用100 W直流电源、W靶10 W射频电源共溅射制备的W掺杂VOX薄膜,经Ar气氛中450℃退火2 h后,薄膜相变温度由未掺杂时的68℃降低到40℃左右。XRD衍射结果表明部分W原子进入了VOX晶格;另外单晶硅片上制备的VOX薄膜的电阻温度系数和电阻值均大于玻璃基片上制备的薄膜。VOx and W-doped VOx thin films were deposited on glass and Si （100） substrates by DC/RF reactive magnetron co-sputtering and then annealed. The test results of resistance-temperature characteristics, XRD patterns, SEM and AFM images showed that：with the gas pressure of 1.5Pa, O2/Ar ratio of 0.8：25 sccm, V target power of DC 100W and W target power of RF 10W, W-doped VOx thin films were prepared and then annealed for 2h in argon atmosphere at 450℃, thus the phase transition temperature reduces from 6832 to about 4032 after doping. The XRD patterns showed that a few W atoms have infiltrated into the VOx lattice. The temperature coefficient of resistance （TCR） and resistance of VOx thin film which grows on Si（100） substrate are both higher than that on glass.

关 键 词：直流 射频磁控共溅射 VOx薄膜 W掺杂 相变温度 基底 

分 类 号：TB43[一般工业技术]