EPG 535光刻胶氧离子刻蚀工艺的研究  

Study on O_2 Reactive Ion Etching Technology of EPG 535 Photoresist

作　　者：任洁[1] 傅莉[1] 孙玉宝[1] 査钢强[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《压电与声光》2011年第4期523-526,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50772091);教育部"新世纪人才支持计划"基金资助项目(NCET-07-0689)

摘　　要：采用反应离子刻蚀(RIE)技术,对EPG 535光刻胶和碲锌镉(CZT)基体刻蚀工艺进行研究,采用原子力显微镜(AFM)法测试CZT基体刻蚀前后的表面质量,探讨了EPG 535光刻胶刻蚀速率和CZT基体表面粗糙度的影响因素。结果表明,当RF功率为60 W、氧气气压为1.30 Pa、氧气流量为40 cm3/min,光刻胶达到最大刻蚀速率;随着RF功率降低,刻蚀后CZT基体的表面粗糙度降低。实验优化的刻蚀参数为:RF功率40 W、氧气气压1.30 Pa、氧气流量40 cm3/min。EPG 535 photoresist and CdZnTe substrate were etched respectively by means of O2 reactive ion etching（RfE） technique. The surface roughness of CdZnTe substrate were detected by atomic force microscope （AFM）. The effects of RF power, Oz pressure and the flux of O2 rate on etching rate of EPG 535 photoresist and the surface roughness of CdZnTe substrate were explored. The results showed that the etching rate was up to extremum when RF power was 60 W, O2 pressure was 1.30 Pa and the flux of O2 was 40 cm^3/min. Surface roughness of CZT substrate after etching decreased with decreasing of RF power. The optimized RIE parameters were as follows： RF power 40 W; O2 pressure 1.30 Pa and the flux of O2 40 cm^3/min.

关 键 词：氧气反应离子刻蚀(RIE) EPG 535光刻胶 碲锌镉晶片 表面粗糙度 刻蚀速率 

分 类 号：TN304.07[电子电信—物理电子学]