Al_2O_3/AlGaN/GaN MOSH结构的制备和性能研究  

Fabrication and Properties of Al_2O_3/AlGaN/GaN MOSH Structure

作　　者：王水力[1] 朱俊[1] 郝兰众[1] 张鹰[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2011年第4期634-636,646,共4页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究发展计划("九七三"计划)基金资助项目(61363)

摘　　要：采用激光脉冲沉积法(PLD)在AlGaN/GaN半导体异质结构衬底上沉积Al2O3栅介质层,并对该异质结构的电学性能进行研究。结果表明,Al2O3栅介质层改善了异质结构的界面质量,增强了器件结构的抗击穿电场强度。研究了沉积氧分压对异质结构性能的影响,电流-电压(I-V)测试结果表明,适当氧分压(0.1 Pa)有利于降低栅漏电流。Hall测量和电容-电压(C-V)模拟结果表明,不同的氧分压会改变Al2O3/AlGaN界面处的正电荷密度,从而改变半导体内的二维电子气(2DEG)密度。The Al2O3 gate dielectric layer was deposited on the heteroepitaxial AlGaN/GaN semiconductor template by using the pulsed laser deposition （PLD） method and its electrical properties were investigated. The results showed that the introduction of A1203 gate dielectric improved greatly the interface of the Al2O3/AlGaN and enhanced the break-down field of the device. The effect of the deposition oxygen pressure on the performance of the hetero structure was studied. The I-V measurement showed that it is helpful to reduce the gate leakage with appro- priate oxygen pressure （about 0. 1 Pa）. The results of Hall measurement and C-V simulation indicated that the change of oxygen pressure is to change the positive charge density on the A12 O3/AlGaN interface, then change the sheet electron concentration of 2DEG in the semiconductor.

关 键 词：ALGAN/GAN 激光脉冲沉积法(PLD) AL2O3 C-V模拟 二维电子气 

分 类 号：TN384[电子电信—物理电子学]