氮化镓基发光二极管结构中粗化p型氮化镓层的新型生长方法  

A new growth method of roughed p-GaN in GaN-based light emitting diodes

作　　者：李水清[1,2] 汪莱[2] 韩彦军[2] 罗毅[2] 邓和清 丘建生 张洁 

机构地区：[1]厦门市三安光电科技有限公司,厦门361009 [2]清华大学电子工程系,集成光电子学国家重点实验室/清华信息科学与技术国家实验室(筹),北京100084

出　　处：《物理学报》2011年第9期707-711,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973)(批准号:2011CB301902,2011CB301903);国家自然科学基金(批准号:60723002,50706022,60977022,51002085);国家高技术研究发展计划(863)(批准号:2007AA05Z429,2008AA03A194);北京市自然科学基金(批准号:4091001)资助的课题~~

摘　　要：提出了一种新型p型氮化镓粗化外延生长方法,这种生长方法的本质特征是利用低温生长的p型氮化镓作为粗化层的"晶籽"层,然后在这一层的基础上高温快速生长p型氮化镓,使粗化程度得到放大.经实际制作尺寸为12mil×10mil的蓝光发光二极管器件并进行验证测试,与未进行p型氮化镓粗化的结果相比,通过这种方法粗化的发光二极管光通量可提升45%;结果同时表明,该方法有效解决了低温生长p型氮化镓带来的漏电流大,及预通镁源带来的前置电压高的问题.A new growth method of roughed p-GaN has been demonstrated in this paper. First, some crystal seeds of p-GaN are obtained by utilizing low-temperature growth. Then, a p-GaN high-temperature expitaxy layer is grown on it subsequently with a fast growth rate, which will enlarge the roughness degree. Compared with the luminous flux of the conventional light emitting diode with flat p-GaN, the luminous flux is improved by 45%. Meanwhile, it is found that the problems of large reverse current and high forward bias aroused by the low-temperature epitaxy are also solved.

关 键 词：粗化 氮化镓 p型氮化镓 发光二极管 

分 类 号：TN312.8[电子电信—物理电子学]