小尺寸应变Si nMOSFET物理模型的研究  

Study of physically modeling for small-scaled strained Si nMOSFET

作　　者：屈江涛[1] 张鹤鸣[1] 秦珊珊[1] 徐小波[1] 王晓艳[1] 胡辉勇[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2011年第9期752-758,共7页Acta Physica Sinica

基　　金：国家部委项目(批准号:51308040203,9140A08060407DZ0103,6139801)资助的课题~~

摘　　要：本文运用高斯定律得出多晶SiGe栅应变SinMOSFET的准二维阈值电压模型,并从电流密度方程出发建立了小尺寸应变SinMOS器件的I-V特性模型.对所得模型进行计算分析,得出沟道Ge组分、多晶Si1-yGey栅Ge组分、栅氧化层厚度、应变Si层厚度、栅长以及掺杂浓度对阈值电压的影响.运用二维器件模拟器对器件表面势和I-V特性进行了仿真,所得结果与模型仿真结果一致,从而证明了模型的正确性.In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.

关 键 词：多晶SiGe栅 高斯定理 阈值电压 速度过冲 

分 类 号：TN386[电子电信—物理电子学]