利用低温插入层改善GaN外延层晶体质量研究  

Influence of Crystallization Quality by Inserting LT GaN Interlayer in HT GaN Growth

作　　者：张东国[1] 李忠辉[1] 孙永强[1] 董逊[1] 李亮[1] 彭大青[1] 倪金玉[1] 章咏梅[1] 

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2011年第4期328-330,344,共4页Research & Progress of SSE

摘　　要：采用MOCVD系统在蓝宝石衬底上生长了GaN外延薄膜,在高温GaN生长中插入了低温GaN。通过改变低温GaN的生长温度和/比得到不同样品。对样品薄膜进行了高分辨X射线衍射(HRXRD)和光致发光谱(PL)测试,PL半峰宽变化不大,XRD半峰宽有明显变化。实验结果表明,低温GaN缓冲层可以使后续生长更好,达到二维生长模式,并且合适的低温生长条件可以明显改善GaN外延层的结晶质量,降低位错密度。The growth of GaN epitaxial film was performed by a VEECO MOCVD on（0001） oriented sapphires.We Inserted an LT GaN layer in HT GaN growth and got several samples by changing temperature and Ⅴ/Ⅲ ratio in LT GaN growing.Properties of GaN layers were investigated by photoluminescence（PL） and high definition X-ray diffraction（HRXRD）.The FWHMs have no large changes in PL testing but have obvious changes in XRD testing.Testing results showed that the growth of LT GaN buffer layer could influence the GaN growth mode to reach 2D growth mode from 3D growth mode,and appropriate conditions in LT GaN buffer layer could obviously improve crystallization quality and reduce dislocation density.

关 键 词：金属有机物化学气相淀积 氮化镓 缓冲层 结晶 

分 类 号：TN304.05[电子电信—物理电子学]