适用于射频识别标签的64-kbit嵌入式阻变存储器  

A 64-kbit Embedded RRAM for Passive UHF RFID Transponders

作　　者：毕中裕[1] 简文翔[1] 金钢[1] 彭巍[1] 闫娜[1] 闵昊[1] 林殷茵[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《固体电子学研究与进展》2011年第4期398-403,共6页Research & Progress of SSE

基　　金：国家重点实验室面上项目(09MS009);国际科技合作项目(2010DFB13040)

摘　　要：设计并实现了一颗适用于射频识别(RFID)标签的低功耗嵌入式64-kbit阻变存储器芯片。提出了新型的带尖峰电流控制功能的高压稳压电路,在提供稳定编程电压的同时降低了芯片电源上的瞬态大电流,改善了存储器电路的可靠性;设计了适用于2T2R(2 Transistors and 2 Resistive cells)单元的敏感放大器,实现了低功耗读出。芯片在640 kb/s数据率下的读功耗为2.2μA,在5 kb/s的写数据率下的写功耗为18.5μA。芯片采用SMIC 0.13μm标准CMOS工艺制造,存储器总面积为0.39 mm2。In this paper,a low power Resistive Random Access Memory（RRAM） embedded in an RFID transponder is presented for the first time.A high voltage regulator with surge current control is proposed to provide a fixed programming voltage for the programming operation and alleviate the startup surge issue as well.Also presented is a sense amplifier for 2T2R cell to achieve low power read-out.The measurement results indicate that the power consumption of the memory is 2.2 μA and 18.5 μA for a 640 kb/s read operation and a 5 kb/s write operation respectively.The whole chip is implemented in a 0.13 μm standard CMOS process while the memory IP occupies 0.39 mm2 die area.

关 键 词：阻变存储器 低功耗 射频识别标签 高压稳压环路 电容分压 

分 类 号：TN492[电子电信—微电子学与固体电子学]