HVPE生长GaN厚膜光致发光特性研究  

Luminescence of GaN Thick Film Grown by HVPE

作　　者：竹有章[1] 傅关新[1] 王红霞[1] 孙振[1] 苑进社[2] 

机构地区：[1]第二炮兵工程学院物理教研室,陕西西安710025 [2]重庆师范大学物理与电子工程学院,重庆400047

出　　处：《激光与光电子学进展》2011年第9期152-156,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(11074200)资助课题

摘　　要：利用吸收光谱和光致发光(PL)光谱研究了氢化物气相外延(HVPE)法生长的GaN厚膜材料发光特性。研究发现当激发脉冲光源的重复频率较低时,PL光谱中仅能观察到带边发光峰,当重复频率增加时,PL光谱中不仅出现带边发光峰,还可观察到蓝带发光峰和黄带发光峰;随着光源重复频率的增加,带边发光峰与黄带发光峰、蓝带发光峰的光强之比也随着增大。分析认为蓝带发光起源于材料中碳杂质缺陷而黄带发光可能与位错等结构缺陷有关。Unintentionally epitaxy （HVPE） is studied doped GaN thick film grown on （0001） oriented Al2O3 substrate by in experiments, by absorption spectra and photoluminescence （PL） hydride vapor phase spectrum. The blue and yellow luminescence at room temperature are observed. The results indicate that when the frequency is low, the PL spectrum is contained by only band-side emission; however, when the frequency becomes high, there are three emission bands （band-side emission, blue emission and yellow emission）. Meanwhile, the higher of the frequency, the larger of I1 （intensity of band-side emission） /Is （intensity of blue emission） and I1/I3 （intensity of yellow emission）. Mter calculation and analysis, it can be considered that the blue luminescence is related with the impurity C of the sample, and the yellow luminescence is related with the structure defects like as dislocations.

关 键 词：薄膜材料 GAN 光致发光 蓝带发光 黄带发光 

分 类 号：O472.3[理学—半导体物理] O482.31[理学—物理]