金属镍诱导p型多晶硅薄膜的光电性能研究  

Study of Photoelectric Properties of p-type Polycrystalline Silicon Thin Films by Nickel Induced Crystallization

作　　者：黄园媛[1] 石培培[1] 牛巧利[1] 章勇[1] 

机构地区：[1]光电子材料与技术研究所华南师范大学,广州510631

出　　处：《功能材料与器件学报》2011年第4期350-354,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金项目(No.10904042);教育部留学回国人员科研启动基金项目;广东省自然科学基金项目(No.8521063101000007)

摘　　要：利用电子束蒸镀方法及重掺杂p型硅为蒸发源在K8玻璃衬底上沉积非晶硅薄膜,采用镍诱导晶化法在氮气氛围下进行退火处理制备出p型多晶硅薄膜。研究了不同温度热处理条件对p型多晶硅薄膜的光电性能的影响,通过霍尔测量、拉曼光谱、原子力显微镜、紫外-可见光吸收光谱等测试手段对薄膜进行分析。结果表明,随着晶化温度的提高晶化程度先增强后减弱。优化晶化温度使30 nm厚p型多晶硅薄膜的方块电阻达到300Ω/□,在可见光范围的透射率超过10%。The amorphous silicon thin films have been deposited on K8 glass substrates by electron beam vapor deposition and high doping p-type silicon as an evaporating source.The p-type polycrystalline silicon（poly-Si） thin films have been fabricated by nickel-induced crystallization in nitrogen atmosphere.The effects of different annealing temperatures on photoelectric properties of p-type poly-Si thin films were investigated.The p-type poly-Si thin films were characterized by Hall,Raman,AFM and ultraviolet-visible absorption spectrometry.The results indicate that with the increase of annealing temperature,the crystallization becomes better at first and worse afterwards.The square resistance of 30 nm thick p-type poly-Si thin films is 300 Ω/□ under the optimization of annealing temperature and the optical transmission is over 10 % in the visible light region.

关 键 词：金属诱导晶化 p型多晶硅薄膜 非晶硅薄膜 

分 类 号：TN304[电子电信—物理电子学] O766[理学—晶体学]