EPROM脉冲总剂量损伤效应实验研究  

Pulsed Total Dose Damage Effect Experimental Study on EPROM

作　　者：罗尹虹[1] 姚志斌[1] 张凤祁[1] 郭红霞[1] 张科营[1] 王园明[1] 何宝平[1] 

机构地区：[1]西北核技术研究所,陕西西安710024

出　　处：《核电子学与探测技术》2011年第7期752-756,共5页Nuclear Electronics & Detection Technology

摘　　要：针对目前国内存储器辐照效应研究大多集中于功能测试,所测参数少的现状,提出了浮栅型存储器阈值电压的测试方法,并对浮栅型存储器EPROM初步开展了脉冲总剂量对器件阈值电压影响的效应研究,分析了损伤机理。研究结果表明,脉冲总剂量引起存储单元阈值电压向负方向发生明显漂移,在不加电和静态加电两种情况下,存储单元阈值电压漂移基本一致。Nowadays,memory radiation effect study mainly focus on functionality measurement.Measurable parameters is few in china.According to the present situation,threshold voltage testing method was presented on floating gate EPROM memory.Experimental study of pulsed total dose effect on EPROM threshold voltage was carried out.Damage mechanism was analysed The experiment results showed that memory cell threshold voltage negative shift was caused by pulsed total dose,memory cell hreshold voltage shift is basically coincident under steady bias supply and no bias supply.

关 键 词：EPROM 阈值电压 脉冲总剂量 

分 类 号：TN386.1[电子电信—物理电子学]