Zn_(1-x)Mg_xO薄膜及其p型掺杂的研究进展  

Recent Progress in Research of p-Type Doping of Zn_(1-x)Mg_xO Thin Films

作　　者：黄桂娟[1] 孔春阳[1] 秦国平[1] 

机构地区：[1]重庆师范大学物理与电子工程学院,重庆400030

出　　处：《材料导报》2011年第17期28-32,41,共6页Materials Reports

基　　金：重庆市自然科学基金(AC4034)

摘　　要：Zn1-xMgxO薄膜作为一种新型的宽带隙半导体材料,近年来一直受到广泛的关注。获得高质量稳定的p型Zn1-xMgxO薄膜是实现其光电应用的关键。概述了Zn1-xMgxO薄膜及其p型掺杂的研究现状,介绍了Zn1-xMgxO薄膜结构、光电性质及在光电领域的应用,并提出了有待进一步研究的问题。As a new wide-band-gap semiconductor material, Zn1-xMgxO films have attracted much attention re cently. Preparution of high quality p-type Zn1-xMgxO films is a key step for its applications. Recent progress in re search of p-type doping of Zn1-xMgxO thin films is summarized and the structure, optical and electrical properties of the Zn1-xMgxO films are introduced. Some problems to be further solved are proposed.

关 键 词：Zn1-xMgxO薄膜 宽禁带半导体材料 P型掺杂 

分 类 号：O484[理学—固体物理]