HVPE生长室气流分布模拟及GaCl载气流量对GaN单晶生长的影响  

Simulation of Gas Distribution in HVPE Reactor and Influence of GaCl Carrier Gas Flow Rate on the GaN Crystal Growth

作　　者：张雷[1] 邵永亮[1] 吴拥中[1] 张浩东[1] 郝霄鹏[1] 蒋民华[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2011年第4期853-857,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50823009);山东省科技发展计划项目(2010GGX10340)

摘　　要：采用计算流体力学软件Fluent对HVPE反应室进行了数值模拟,研究了GaCl载气流量对HVPE反应室气流分布的影响,发现GaCl载气流量是影响GaCl和NH3在衬底上均匀分布的重要因素。采用HVPE方法在不同GaCl载气流量下生长GaN单晶,研究了GaCl载气流量对GaN单晶质量的影响,得到了与模拟一致的结果。In this paper,HVPE reactor was simulated by Fluent software.The influence of GaCl carrier gas flow rate on the gas distribution of HVPE reactor was investigated.The results show that GaCl carrier gas flow rate have great effect on the uniform distribution of GaCl and NH3 on substrate.GaN crystal was grown by HVPE method at different GaCl carrier gas flow rate.The influence of GaCl carrier gas flow rate on the quality of GaN crystal was investigated.The experimental results are consistent with simulations.

关 键 词：模拟 GAN 氢化物气相外延 气流分布 

分 类 号：O614[理学—无机化学]