非磁性元素掺杂ZnO稀磁半导体研究进展  

Recent Progress on Non-magnetic Elements Doped ZnO Diluted Magnetic Semiconductors

作　　者：卓世异[1,2] 刘学超[1] 熊泽[1,2] 陈之战[1] 杨建华[1] 施尔畏[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800 [2]中国科学院研究生院,北京100049

出　　处：《人工晶体学报》2011年第4期1048-1052,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50772122;51002176)

摘　　要：ZnO基稀磁半导体的磁性来源和机理一直是研究的热点和难点。传统的磁性3d过渡族元素掺杂ZnO容易形成铁磁性的第二相,而非磁性元素掺杂可以很好的避免这一弊端,是研究稀磁半导体磁性来源和机理的理想体系。而且理论计算和实验方面已经报道了室温以上的铁磁性。本文从实验上和理论上综述了非磁性元素掺杂ZnO基稀磁半导体最近的研究进展。The ferromagnetism origin and mechanism was the continuing research hotspots and difficulty issues in the field of ZnO-based diluted magnetic semiconductors.In general,ferromagnetic 3d transition metals doped ZnO tend to form ferromagnetic secondary phase,while non-magnetic elements doped ZnO will not introduce this problem and have been regarded as ideal system for investigating the ferromagnetism origin and mechanism.Above room-temperature ferromagnetism has been theoretically prectied in such systems.In this paper,the recent progress of non-magnetic elements doped ZnO-based diluted magnetic semiconductor was reviewed.

关 键 词：稀磁半导体 ZNO 非磁性元素掺杂 室温铁磁性 

分 类 号：TN304[电子电信—物理电子学]