一种多喷淋头式MOCVD反应器的设计与数值模拟  

Design and Simulation of a Multi-showerheads MOCVD Reactor

作　　者：于海群[1] 左然[1] 陈景升[1] 

机构地区：[1]江苏大学能源与动力工程学院,镇江212013

出　　处：《人工晶体学报》2011年第4期1065-1070,1082,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(60376006);江苏省研究生创新计划项目(CX10B_260Z)

摘　　要：提出了一种多喷淋头式MOCVD反应器。针对新型反应器,对GaN生长的MOCVD过程进行了数值模拟,模拟考虑了热辐射和化学反应,计算了反应器内流场、温场和浓度场,导流筒壁面的寄生沉积以及GaN生长速率,并分析了反应室几何因素对生长均匀性的影响。模拟结果显示,衬底表面大部分区域具有均匀的温场和良好的滞止流。通过对浓度场和GaN生长速率的分析,得出MMGa是薄膜生长的主要反应前体。通过对反应器高度H、导流筒与托盘间距h、导流筒半径R等参数的优化,给出了提高薄膜生长速率和均匀性的条件。A novel MOCVD reactor with multi-showerheads was proposed.For the new reactor design,considering the thermal radiation and the chemical reactions,a numerical simulation for MOCVD of GaN growth was conducted.The flow,temperature,concentration fields,parasitic deposition on the nozzle wall and GaN growth rate were predicted.The effects of reactor geometry on the uniformity of the growth were studied.Simulation results showed that most regions have a uniform temperature field and a good stagnation flow in substrate surface,and by analyzing the concentration field and GaN growth rate,it was shown that MMGa is the main reaction precursors for the thin film growth.Under a wide range of geometric parameters,such as optimizing the reactor height H,gap h between nozzle and susceptor,nozzle radii R,it was finally obtained the conditions to raise the growth rate and uniformity of thin film.

关 键 词：多喷淋头 MOCVD 反应器设计 GAN生长 数值模拟 

分 类 号：O484[理学—固体物理]