射频反应磁控溅射法制备N掺杂p型氧化亚铜薄膜  

Growth and Characterization of N-Doped p-Type Cu_2O Films by RF Reactive Magnetron Sputtering

作　　者：林龙[1] 李斌斌[1] 鲁林峰[1] 沈鸿烈[1] 刘斌[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《真空科学与技术学报》2011年第5期570-573,共4页Chinese Journal of Vacuum Science and Technology

基　　金：江苏省科技计划项目资助(SBK200910177);南京航空航天大学基本科研业务费专项科研项目资助(NS2010160)

摘　　要：通过射频反应磁控溅射方法在玻璃衬底上制备N掺杂的Cu2O薄膜,采用X射线衍射、分光光度计、X射线光电子能谱和霍尔效应等检测,研究了氮气掺杂对Cu2O薄膜性能的影响。结果表明:随着N原子的掺入,薄膜的结晶质量下降,光学带隙从2.28 eV升至2.47 eV左右,同时薄膜的电学性能趋于稳定。当N2/O2流量比率为0.6时,薄膜电阻率为1.5Ω.cm,空穴浓度为2.16×1019cm-3,霍尔迁移率为0.5 cm2.V-1.s-1。The N-doped,p-type Cu2O films were deposited by rf reactive magnetron sputtering on glass substrates.The impacts of the growth conditions,including the N-doping levels,ratio of the N2/O2 flow rates,and sputtering power,on its properties were studied.Its microstructures and properties were characterized with X-ray diffraction,X-ray photoelectron spectroscopy（XPS）,ultra-violet visible light（UV-Vis） spectroscopy,and Hall-effect measurements.The results show that the N impurity content and the ratio of the N2/O2 flow rates strongly affect its microstructures and properties.For instance,as the N-doping level increases,its crystalline structure deteriorates,whereas its optical band gap widens from about 2.28 eV to 2.47 eV.Moreover,its electrical properties tend to be more stable.At a N2/O2 ratio of 0.6,its resistivity was 1.5 Ω·cm;and its hole concentration and Hall mobility were found to be 2.16×1019 cm-3 and 0.5 cm2V-1s-1,respectively.

关 键 词：氧化亚铜 磁控溅射 霍尔效应 X射线光电子谱 

分 类 号：O484[理学—固体物理]