绝缘氧化层上自离子注入Si薄膜W线发光性能的调控  

Manipulations of properties of the W-line emitting from the Si^+ Self-ion-implanted Si thin films on insulated oxide layer

作　　者：王茺[1] 杨宇[1] 杨瑞东[1] 李亮[1] 韦冬[1] 靳映霞[1] Bao Ji-Ming 

机构地区：[1]云南大学光电信息材料研究所,昆明650091 [2]Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA

出　　处：《物理学报》2011年第10期506-511,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10964016,10990103);教育部科学技术研究重点项目(批准号:210207);云南大学理工基金(批准号:2009E27Q)资助的课题~~

摘　　要：对SOI基片上的Si薄膜进行了一系列Si+自注入和热退火的改性实验,并利用低温光致发光(PL)光谱对这些Si薄膜样品的发光性能进行了测试.在这些SOI样品的PL光谱中观察到了丰富的光学结构,包括D1,D2,D3,X以及异常尖锐的W线.通过对比在同等光谱测试条件下的W线归一化强度,获得了针对SOI基片发射W线较为理想的自注入和热退火参数.同时,还对D系列发光峰以及W线的缺陷起源和光学性质进行了很好的讨论.The Si＋ self-ion-implanted and annealing experiments are conducted on the Si film based on the silicon-on-insulator wafers.The photoluminescence（PL） spectroscopy is used to investigate the luminescence properties of these Si film samples.Plentiful optical structures are observed in the PL spectra,including the D1,D2,D3,X,and the sharp W lines.By comparing the normalized PL intensities recorded by the same spectral experiments,we obtain the optimum self-ion-implanted and thermal annealing parameters.In addition,the defect origins and optical properties of the series of the D peaks and W line are well discussed.

关 键 词：SOI结构 自离子注入 W线 近红外发光器件 

分 类 号：O472.3[理学—半导体物理]