PbS红外探测器低频噪声物理模型及缺陷表征研究  

Investigation on the low-freauency noise physical models and the defects' characterization of the PbS infrared dectector

作　　者：陈文豪[1] 杜磊[1] 殷雪松[1] 康莉 王芳[1] 陈松 

机构地区：[1]西安电子科技大学技术物理学院,西安710071 [2]陕西华星电子集团有限公司红外器件分公司,咸阳712099

出　　处：《物理学报》2011年第10期573-578,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2010CB631002)资助的课题~~

摘　　要：为了表征PbS薄膜光导红外探测器的材料缺陷,详细推导了1/f和产生-复合(g-r)噪声物理模型,并由实验数据验证了模型的准确性.利用1/f噪声与表面缺陷关系,计算了不同偏压下表面陷阱密度.得到该值随偏压升高而增加,由此得出1/f噪声与所加偏压成正比变化,与实验测试结果相一致.在此模型基础上,研究了g-r噪声与深能级缺陷特征参量的关系,提出由低频噪声表征缺陷激活能、简并因子、俘获截面等缺陷参数的方法.In order to characterize the defects of PbS thin film photoconductive infrared detector materials,The physical model of 1/f noise and g-r noise are deduced and verified.The surface trap densities under different voltages are calculated by the relation between 1/f noise and surface trap in this model.The phenomenon that the surface trap density increases with bias voltage is observed.Therefore,the conclusion that 1/f noise is proportional to bias voltage is drawn,and it is consistent with the experimental measurements.In addition,the relation between g-r noise and deep-level defect characterization parameters is investigated based on this model,and the method of using low frequency noise to characterize defect parameters including defect activate energy,degeneracy factor and capture section is presented.

关 键 词：红外探测器 1/f噪声 G-R噪声 缺陷 

分 类 号：TN215[电子电信—物理电子学]