温度补偿对氮化铝(AlN)薄膜择优取向的影响  

The affect of temperature compensation to preferred orientation of aluminum nitride(AlN) films

作　　者：宋振坤[1] 陈希明[1] 郭燕[1] 孙连婕[1] 

机构地区：[1]天津理工大学电子信息工程学院天津市薄膜电子与通信器件重点实验室,天津300384

出　　处：《天津理工大学学报》2011年第4期64-67,共4页Journal of Tianjin University of Technology

基　　金：国家自然科学基金(50972105;60806030);天津自然科学基金(09JCZDJC16500;08JCYBJC14600)

摘　　要：氮化铝(AlN)薄膜不同的择优取向直接影响其压电性和声波传递速度.本文通过改变衬底补偿温度对AlN薄膜的择优取向进行了研究.在正常实验溅射完成后继续通入氮气对衬底进行温度补偿.应用XRD和AFM对氮化铝薄膜的取向性和表面形貌进行表征分析,结果表明本实验制备出了较好的(002)面和(100)面取向的AlN薄膜,而且薄膜沉积均匀,比较致密.Different preferential orientation of aluminum nitride（AlN） films can directly affect its piezoelectric properties and sound transmission speed.The preferred orientation of AlN thin films is be studied by changing the compensative temperature of the substrate in this paper.In the normal experiment nitrogen is still passing into after sputtering for temperature compensation of the substrate,XRD and AFM are used to analysis the orientation of AlN thin films and surface morphology,and the results show that in this study AlN films which is（002） and（100） better oriented have been prepared and deposited uniformity and more compact.

关 键 词：氮化铝薄膜 择优取向 温度补偿 原子力显微镜 

分 类 号：TU352.110.4[建筑科学—结构工程]