f_T=140GHz,f_(max)=200GHz的超高速InP DHBT  

Ultra High Speed InP DHBTs with f_T=140 GHz and f_(max)=200 GHz

作　　者：蔡道民[1,2] 李献杰[1] 赵永林[1] 刘跳[1] 高向芝[1] 郝跃[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]西安电子科技大学微电子学院,西安710071

出　　处：《半导体技术》2011年第10期743-746,共4页Semiconductor Technology

基　　金：国家重点基础研究发展计划(973计划)资助项目(2010CB327603)

摘　　要：InP/InGaAs/InP DHBT具有频带宽、电流驱动能力强、线性好、相位噪声低和阈值电压一致性好等优点成为研究热点。通过优化外延材料结构设计和采用四元InGaAsP缓变层消除集电结电流阻塞效应;改进发射极-基极自对准工艺和集电区台面侧向腐蚀工艺,降低Rb和Cbc乘积;优化PI钝化工艺和空气桥互联等工艺,实现了发射极面积为2μm×10μm的自对准InP/InGaAs/InP DHBT器件,其直流增益β约为25,击穿电压BVCEO≥7 V@10μA,在VCE=4 V,Ic=10 mA下,截止频率fT=140 GHz,最高振荡频率fmax=200 GHz,优于同一外延片上的非自对准InP DHB器件,该器件将可应用于高速光通信和微波毫米波通信。The InP/InGaAs/InP double heterojunction bipolar（DHBT） becomes one of the focuses due to its wide bandwidth,high current driving capability,good linearity,good phase noise and good uniformity of threshold voltage distribution.First,the optimizing epitaxial structure and InGaAsP material grading were introduced to eliminate conduction band discontinuity at the BC junction of InP/InGaAs DHBTs.Then,the emitter-base self-aligned contact and undercut etching for base-collector mesa were used to reduce the RbCbc product.Finally,the PI passivation process and air-bridge process were optimized,an self-aligned InP DHBT with 2 μm×10 μm emitter area was achieved with fT of 140 GHz and fmax of 200 GHz at VCE=4 V and Ic=10 mA,simultaneously.The device exhibits a current gain β of 25 and breakdown voltage of BVCEO≥7 V @ 10 μA.And compared with the no self-aligned InP DHBT on the same wafer,the former has better RF characteristics.This device is suitable for high speed fiber-optic communications and millimeter wave applications.

关 键 词：双异质结双极晶体管(DHBT) 缓变层 发射极-基极自对准 空气桥 侧向腐蚀 

分 类 号：TN322.8[电子电信—物理电子学] TN304.2