氧化锌纳米线晶体管的电学特性研究  

Research on the Electrical Properties of ZnO Nanowire Transistor

作　　者：付晓君[1] 张海英[1] 徐静波[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2011年第10期778-781,785,共5页Semiconductor Technology

基　　金：中国科学院微电子研究所所长基金项目(O8SB034002)

摘　　要：成功制作了氧化锌纳米线沟道场效应晶体管器件,所制作器件的电学性能通过I-V测试进行了分析。使用了水浴法生长了单晶性完整的氧化锌纳米线,该纳米线被用作背栅场效应晶体管的沟道,采用光刻方式制备的器件具有良好的直流特性,进行退火后进一步改善器件的源漏接触,提高器件性能,最终制备成功的场效应晶体管显示出p型MOS的特性,其开关态电流比达到105。在Vds=2.5 V时,跨导峰值为0.4μS,栅氧电容约为0.9 fF,器件夹断电压Vth为0.6 V,沟道迁移率约为87.1 cm2/V.s,计算得到氧化锌纳米线载流子浓度ne=6.8×108 cm-3。在Vgs=0 V时,器件沟道电阻率为100Ω.cm。The suspended ZnO nanowire field-effect transistor s（FETs） were successfully fabricated,and their electrical properties were char acterized by I-V measurements.Single-crystalline ZnO nanowires synthesized by a hydrothermal method were use d as a channel of back-gate field-effect transistors（FET）.These characteristi cs revealed that the suspended nanowire FET fabricated by the photolithography p rocess had excellent performance.Better contacts between the ZnO nanowire and m etal electrodes could be improved through annealing.The fabricated suspended na nowire FETs showed a p-channel depletion mode device when Vds=2.5 V, the peak transconductances of the ZnO nanowire FET are 0.4 μS,the oxide capac itance is 0.9 fF,the pinch-off voltage Vth is 0.6 V,the electro n mobility is on average 87.1 cm2/V·s.The resistivity of the ZnO nano wire channel is estimated to be100 Ω·cm at Vgs= 0 V.The carr ier concentration ne is 6.8 ×108 cm-3.

关 键 词：氧化锌 纳米线 场效应晶体管 背栅 退火 

分 类 号：TN304.21[电子电信—物理电子学] TN386