GaMnAs薄膜洛伦兹振子模型参数提取以及材料缺陷分析  

The Parameter extraction of GaMnAs Lorentz Oscillator Model and Defect Analysis

作　　者：蔡娟露[1,2,3] 程兴华[1,2,3] 钟玉杰[1,2,3] 何志刚 史同飞[1,2,3] 龚敏[1,2,3] 石瑞英[1,2,3] 

机构地区：[1]四川大学物理科学与技术学院微电子学系,成都610064 [2]微电子技术四川省重点实验室,成都610064 [3]中科院固体物理所

出　　处：《光散射学报》2011年第3期238-243,共6页The Journal of Light Scattering

基　　金：国家自然科学基金(60676052)

摘　　要：利用改进的遗传算法从GaMnAs外延薄膜的远红外反射光谱中提取了GaMnAs薄膜的洛伦兹振子模型参数,发现GaAs掺入Mn后,ωTO向低频方向移动,ωLO基本保持不变,ε∞和εs均减小,γ有很大变化。并通过XRD以及近红外谱发现Mn的掺入会引入缺陷,这种缺陷会影响晶格质量,导致γ发生很大变化。The revised genetic algorithm was successfully used to extract the Lorentz oscillator model parameters of GaMnAs from far-infrared reflectance spectra.Comparing the Lorentz oscillator model parameters of GaMnAs with those of GaAs,it was found that ωTO moved to lower frequencies,ε∞ and εs decreased,γ changed greatly,but the ωLo was almost not changed.Analysis on XRD and near-infrared spectrum of GaMnAs shows that introduced defects by Mn incorporation affects the quality of lattice and leads γ changed dramatically.

关 键 词：GAMNAS 遗传算法 洛伦兹振子模型 缺陷 XRD 红外光谱 

分 类 号：O484.4[理学—固体物理] O474[理学—物理]