氮氧化硅薄膜红外吸收特性的研究  

Infrared Absorption Properties of Silicon Oxynitride Films

作　　者：周顺[1,2] 刘卫国[1,2] 蔡长龙[2] 刘欢[2] 

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071 [2]西安工业大学陕西省薄膜技术与光学检测重点实验室,陕西西安710032

出　　处：《兵工学报》2011年第10期1255-1259,共5页Acta Armamentarii

基　　金：陕西省教育厅专项科研计划项目(2010JK590);陕西省重点实验室开放基金项目(ZSKJ200904)

摘　　要：利用等离子体增强化学气相沉积法沉积氮氧化硅(SiOxNy)薄膜,通过X射线光电子能谱仪、傅里叶变换红外光谱仪、椭偏仪等表征技术,研究不同N2O与NH3流量比R条件下薄膜的组分、光学常数及红外吸收特性。研究结果表明:随着流量比R的增加,SiOxNy薄膜中O的相对百分含量提高,N含量降低,而Si含量基本不变;薄膜由于Si—O、Si—N键形成的吸收峰峰值波长向短波(高波数)移动,变化范围为11.6μm(波数860 cm-1)～9.4μm(波数1063 cm-1),且吸收峰的宽度先增大后减小。此外,薄膜的折射率与薄膜中H含量也随流量比R的增加而降低。相比于SiOx,SiNx薄膜,组分特定的SiOxNy薄膜的吸收峰最宽且在长波红外窗口8～12μm内吸收强度最大,说明SiOxNy薄膜是一种良好的热探测器选择吸收层材料。Abstract： Silicon oxynitride films were deposited in a PECVD reactor. The N20/NH3 flow ratio was varied in order to obtain different oxynitride compositions. The films were characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry and Fourier transform infrared absorption spectroscopy. The compositions, optical constants and infrared optical absorption properties of silicon oxynitride films were investigated. The results show that the O atomic content increases,the N atomic content decreases, and the Si atomic content keeps nearly unchanged as the N20/NH3 flow ratio increases. The silicon oxynitride films show a dominant infrared absorption peak due to the Si-O/Si-N bond, with the infrared absorption peak located between 11.6μm （860 cm -1 ） and 9.4μm （ 1 063 cm -1 ） . The position of absorption peak also shifts to a shorter wavelength when the N20/NH3 flow ratio increases. Meanwhile, the width of absorption peak increases firstly and then decreases with the increase in N20/NH3flow ratio. Moreover, the H content and the refractive index decrease with the increase in flow ratio. Compared with silicon oxide and silicon nitride films, the silicon oxynitride films with a specific composition have the largest width of absorption peak and the strongest intensity between 8μm and 12μm, which make them be well suited for the absorber of thermal detectors.

关 键 词：光学 薄膜 氮氧化硅 红外吸收 等离子体增强化学气相沉积 

分 类 号：O433.4[机械工程—光学工程]