基于中低压器件实现的高压负电平位移电路  

Negative High Voltage Level Shifter Based on Low-and Middle-Voltage MOSFETs

作　　者：吴琼乐[1] 管超[1] 陈吕赟[1] 柏文斌[1] 王泽华[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《微电子学》2011年第5期645-648,共4页Microelectronics

基　　金：国家科技重大02专项(2010ZX02201)

摘　　要：提出了一种新型高压负电平位移电路。该电路只采用中低压PMOS来实现高压电平位移,与传统的高压负电平位移电路相比,降低了工艺及器件难度。分析了该新型电平位移电路的电路结构与工作原理。采用1μm CMOS工艺,通过HSPICE进行电路仿真验证,证明提出的高压负电平位移电路正确可行。A novel negative high voltage level shifter was proposed,in which only low-voltage or middle-voltage MOS transistors were used to implement high voltage level shift.Compared with the conventional high negative level shifters,the novel circuit was easier for process implementation.Structure of the circuit and its operational principle were analyzed.HISPICE simulation based on 1 μm CMOS process validated the novel negative high voltage level shifter.

关 键 词：中低压器件 高压负电平 位移电路 CMOS 

分 类 号：TN433[电子电信—微电子学与固体电子学]