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作 者:李瑶[1] 陈寅之[1] 唐永旭[1] 蒋洪川[1] 刘兴钊[1]
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
出 处:《电子元件与材料》2011年第11期9-11,共3页Electronic Components And Materials
摘 要:采用直流磁控溅射法在镍基高温合金DZ4上制备了NiCrAlY薄膜,并对NiCrAlY薄膜进行真空热处理后再进行高温氧化,以生成一层致密的Al2O3膜,研究了真空热处理对NiCrAlY薄膜表面高温氧化的影响。结果表明:经过真空热处理的NiCrAlY薄膜,高温氧化后表面生成了单一、稳定的α-Al2O3相,Al和O的粒子数分数分别约为32%和50%;而未经过真空热处理直接氧化的NiCrAlY薄膜表面含有θ-Al2O3和α-Al2O3两种物相,且分布不均匀。NiCrAlY films were deposited on the nickel-based supemlloy DZ4 by DC magnetron sputtering. The NiCrAIY films were annealed in vacuum and then oxidized at high temperature to form a layer of dense Al2O3 on the surface of the film. The effects of vacuum heat treatment on high temperature oxidation behavior of the surfaces of sputtered NiCrA1Y films were studied. The results show that a single stable α-Al2O3phase is formed on the surface of the NiCrAIY film which is oxidized at high temperature in oxygen atmosphere after vacuum heat treatment, and the population fractions of Al and O on the surface of this film are about 32% and 50%, respectively. θ-Al2O3 and α-Al2O3 phases are formed on the surface of the NiCrAlY film without vacuum heat treatment after high temperature oxidation, and with uneven distribution.
分 类 号:TG174.4[金属学及工艺—金属表面处理]
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