0.18μm NMOS的重离子单粒子瞬态脉冲的仿真模拟  

0.18 μm NMOS Heavy Ion Single Event Transient Simulation

作　　者：李飞 安海华 

机构地区：[1]西安卫光科技有限公司,西安710065

出　　处：《电子器件》2011年第5期558-561,共4页Chinese Journal of Electron Devices

摘　　要：为了详细地了解纳米MOS电路中单粒子瞬变电荷收集机理,利用ISETCAD软件仿真二维模拟0.18μm NMOS的单粒子瞬态脉冲。通过进行三种不同的电路连接方式和不同的粒子注入位置的仿真,得到了一系列单粒子瞬态电流脉冲(SET)与时间的关系曲线。分析了不同电路连接方式和注入位置对SET的峰值和脉宽的影响。为下一步建立SET的精确模型进行SET效应的模拟做基础的研究。For a detailed understanding of the nano-MOS Single Event Transient charge collection mechanism,simulation of the single event transient of 0.18 μm NMOS by using the ISETCAD software is made.By connecting three different circuits and choosing different positions of particles in the simulation,a series of single-event transient current pulse（SET）versus time is obtained.An analysis of the influence of the different circuits and positions on the pulse width and magnitude of the SET is made.A basic research has been done for establishing the precise mode of SET in the future.

关 键 词：ISE仿真 NMOS 单粒子瞬态脉冲 单粒子注入位置 

分 类 号：TN783[电子电信—电路与系统]